1060nm, 80mW Gain Chip

1060nm Gain Chip Overview

Typical Specifications:
- Center Wavelength: 1060 nm
- Optical Bandwidth@3dB: 30-43 nm
- Gain Ripple (RMS): TBD dB
- ASE Power: 9-10 mW
- Operation Current: 100-180 mA
- Operation Voltage: 1.7-2.2 V
- Beam Divergence, perp. (FWHM) θ┴: 35°
- Beam Divergence, parallel (FWHM) θ//: 15°
- Facet Reflectance (Angled facet): 0.01%
- Facet Reflectance (Normal facet): 7.5%
- Operation Temperature: -20 to 30°C

Absolute Maximum Ratings:
- Operation Current: 180 mA
- Operation Voltage: 2.2 V
- Reverse Voltage: 2 V
- Storage Temperature: -40 to 85°C
- Soldering Temperature: 260°C for 10 seconds

Features
- Wide tuning band
- Low facet reflectance w/ angled facet structure

Application
- Tunable external cavity lasers
- Wide band light source

The QLF101A-AA 1060 nm Gain Chip is a semiconductor laser device suitable for use in a wide-band tunable light source. It has a center wavelength of 1060 nm and a typical optical bandwidth of 30-43 nm. The chip features a wide tuning band, low facet reflectance with angled facet structure, and is suitable for use in tunable external cavity lasers and wide band light sources. The chip has a maximum optical output power of 80 mW, an operation current of 100-180 mA, and an operation voltage of 1.7-2.2 V. It is classified as a Class 3B laser product and complies with 21 CFR Part 1040.10.