635nm 20mW TO-can Laser Diode

Typical Specifications:
- Optical Output Power (Po): 20mW
- Lasing Wavelength (λp): 635nm
- Beam Divergence (∆θ): ±2.0 deg
- Beam Angle (∆θ ⊥): ±3.0 deg
- Monitor Current (Im): 0.05mA - 0.7mA
- Optical Distance (∆X, ∆Y, ∆Z): ±60μm
- Operating Current (Iop): 60mA - 80mA
- Operating Voltage (Vop): 2V

Absolute Maximum Ratings:
- Optical Output Power (P): 24mW
- Laser Diode Reverse Voltage (V): 2V
- Photo Diode Reverse Voltage (V): 30V
- Operating Temp (Topr): -10°C to +50°C
- Storage Temperature (Tstg): -40°C to +85°C

The QL63H5S-A/B/C InGaAlP Laser Diode is a high-performance light source designed for various optoelectronic applications. With a typical optical output power of 20mW and a lasing wavelength range of 630nm to 645nm, this laser diode emits a visible red light. It features a beam divergence of ±2.0 degrees and a beam angle of ±3.0 degrees, providing a focused and controlled beam. The laser diode also includes a built-in Photo Diode for monitoring purposes, with a monitor current ranging from 0.05mA to 0.7mA. The operating current for this diode is typically between 60mA and 80mA, with an operating voltage of 2V. It is important to note that these specifications are subject to change without notice, so it is recommended to refer to the latest product information provided by the manufacturer.