635nm, 40mW Diode Laser

Typical Specifications:
- Optical Output Power (Po): 40mW
- Lasing Wavelength (λp): 635nm
- Beam Divergence (θ): 7°, 11°, 15°
- Beam Angle (∆θ): ±2.0°
- Monitor Current: 0.01mA, 0.25mA, 0.7mA
- Optical Distance (∆X, ∆Y, ∆Z): ±60μm

Absolute Maximum Ratings:
- Optical Output Power (P): 40mW
- Laser Diode Reverse Voltage (V): 2V
- Photo Diode Reverse Voltage (V): 30V
- Operating Temp (Topr): -10°C to +50°C
- Storage Temp (Tstg): -40°C to +85°C

The QL63J5S-A/B/C-L InGaAlP Laser Diode is a high-performance laser diode designed for use in a variety of applications, including medical equipment, barcode scanners, and laser printers. It emits light at a wavelength of 633nm, 639nm, or 645nm, with a typical output power of 40mW. The laser diode has a compact package size and is easy to integrate into existing systems. It also features a low threshold current and operating current, making it energy-efficient and cost-effective. The laser diode is designed to operate within a temperature range of -10°C to +50°C and has a storage temperature range of -40°C to +85°C.