635nm, 60mW Laser Diode from QSI

Typical Specifications:
- Threshold Current Ith: 40 mA
- Operating Current Iop: 105 mA Po=60mW
- Operating Voltage Vop: 2.2 V Po=60mW
- Lasing Wavelength λp: 635 nm Po=60mW
- Beam Divergence θ⊥: 22 28 33 deg Po=60mW
- Beam Angle ∆θ⊥: ±3.0 deg Po=60mW
- Monitor Current Im: 0.01 0.3 0.9 mA
- Optical Distance ∆X, ∆Y, ∆Z: ±60 μm

Absolute Maximum Ratings:
- Optical Output Power: 60 mW
- Laser Diode Reverse Voltage: 2 V
- Photo Diode Reverse Voltage: 30 V
- Operating Temperature Topr: −10 ~ +40 °C
- Storage Temperature Tstg: −40 ~ +85 °C

The QL63K4S-A/B/C-L is an InGaAlP laser diode that emits light at a wavelength of 633-645 nm with a typical output power of 60 mW. It has a threshold current of 40 mA and an operating current of 105 mA at 25°C. The laser diode has a wallplug efficiency of 18-24% at 25°C and 9-17% at 40°C. It has a beam divergence of 22-33 degrees and a beam angle of ±3.0 degrees at 60 mW. The laser diode is designed to be operated on APC and has a maximum operating temperature of -10 to +40°C and a storage temperature of -40 to +85°C.