637nm, 5mW Laser Diode

Typical Specifications:
- Optical Output Power: 5 mW
- Threshold Current: 23 mA
- Operating Current: 32 mA
- Operating Voltage: 2.2 V
- Lasing Wavelength: 637 nm
- θ: 6 8 12 deg Po=5mW
- Beam Divergence: θ ⊥ = 34 deg
- ∆θ: ±2.0 deg
- Beam Angle: ∆θ⊥: ±3.0 deg
- Monitor Current: 0.15 mA
- Optical Distance: ±60 μm

Absolute Maximum Ratings:
- Optical Output Power: 6 mW
- Laser Diode Reverse Voltage: 2 V
- Photo Diode Reverse Voltage: 30 V
- Operating Temperature: −10 ~ +40 °C
- Storage Temperature: −40 ~ +85 °C

Overview:
The QL63D4S-A/B/C laser diode is an InGaAlP-based device designed for various applications that require a reliable and efficient light source. It offers a typical optical output power of -5 mW and operates at a wavelength range of 630-640 nm. The laser diode has a threshold current of 23-35 mA and an operating current of 32-45 mA at a power output of 5 mW. It operates at an operating voltage of 2.2-2.7 V. The beam divergence is 28-40 degrees, and the beam angle is within ±3.0 degrees. The laser diode also features a monitor current of 0.05-0.4 mA and an optical distance tolerance of ±60 μm.