660nm, 100mW Diode Laser

Typical Specifications:
- Threshold Current (Ith): 75-100 mA
- Operating Current (Iop): 160-180 mA
- Operating Voltage (Vop): 2.0-3.0 V
- Peak Wavelength (λp): 654-666 nm
- Slope Efficiency (SE): 0.7-1.3 W/A
- Beam Divergence (θ⊥): 15-21 degrees
- Beam Angle (∆θ⊥): ±3 degrees
- Monitor Current (Im): 0.05-1.50 mA

Absolute Maximum Ratings:
- Optical Output Power (Po): 80 mW
- Laser Diode Reverse Voltage (V): 2 V
- Photo Diode Reverse Voltage (V): 30 V
- Operating Temperature: -10 to +60 °C
- Storage Temperature: -40 to +80 °C

Overview:
The attached QSI Laser Diode data sheet references a 660nm band InGaAlP laser diode. Applications referenced on the data sheet include High Power Laser Modules, medical applications, and portable high density optical disc drives. This QSI Laser device offersquantum well structure with a typical light output power of CW 100mW and pulse 230mW. It is an ideal source for optical storage devices such as High Power Laser Modules. Features include center wavelength of 660 nm, power output 100mW CW, and a TO-18 (5.6mmφ) package.