660nm, 80mW InGaAlP Laser Diode

Typical Specifications:
- Threshold Current (Ith): 75-100 mA
- Operating Current (Iop): 160-180 mA
- Operating Voltage (Vop): 2.0-3.0 V
- Peak Wavelength (λp): 654-666 nm
- Slope Efficiency (SE): 0.7-1.3 W/A
- Beam Divergence (θ⊥): 15-21 degrees
- Beam Angle (∆θ⊥): ±3 degrees
- Monitor Current (Im): 0.05-1.50 mA

Absolute Maximum Ratings:
- Optical Output Power (Po): 80 mW
- Laser Diode Reverse Voltage (V): 2 V
- Photo Diode Reverse Voltage (V): 30 V
- Operating Temperature: -10 to +60 °C
- Storage Temperature: -40 to +80 °C

Overview:
The QL65L6S-A/B/C InGaAlP laser diode is a high-performance, reliable light source designed for use in a variety of applications, including optical communication, measurement, and sensing. It has a typical output power of 80 mW and a peak wavelength of 654-666 nm. The laser diode has a threshold current of 75-100 mA and an operating current of 160-180 mA, with an operating voltage of 2.0-3.0 V. It also has a slope efficiency of 0.7-1.3 W/A and a beam divergence of 15-21 degrees. The laser diode is designed to operate at temperatures ranging from -10 to +60 °C and can be stored at temperatures ranging from -40 to +80 °C.