670nm, 10mW Laser Diode from QSI

Typical Specifications:
- Optical Output Power (Po): -10 mW
- Threshold Current (Ith): 40-60 mA
- Operating Current (Iop): 50-70 mA
- Operating Voltage (Vop): 2.3-2.6 V
- Lasing Wavelength (λp): 660-670 nm
- Beam Divergence (θ): 7-11 degrees
- Beam Divergence (θ⊥): 24-35 degrees
- Beam Angle (Δθ): ±1.5 degrees
- Beam Angle (Δθ⊥): ±2.5 degrees
- Monitor Current (Im): 0.1-0.5 mA
- Astigmatism (As): 30 μm
- Optical Distance (ΔX, ΔY, ΔZ): ±60 μm

Absolute Maximum Ratings:
- Optical Output Power: 12 mW
- Laser Diode Reverse Voltage: 2 V
- Photo Diode Reverse Voltage: 30 V
- Operating Temperature: -10 to +60 °C
- Storage Temperature: -40 to +85 °C

Overview
The QL67F6S-A/B/C laser diode is an InGaAlP-based device designed for various applications that require a reliable and efficient light source. It offers a typical optical output power of -10 mW and operates at a threshold current of 40-60 mA. The laser diode has an operating current range of 50-70 mA and an operating voltage range of 2.3-2.6 V.

It emits light at a lasing wavelength of 660-670 nm and has a beam divergence of 7-11 degrees and a beam divergence perpendicular to the junction plane of 24-35 degrees. The beam angle is ±1.5 degrees, and the beam angle perpendicular to the junction plane is ±2.5 degrees. The monitor current ranges from 0.1 to 0.5 mA, and the astigmatism is 30 μm. The optical distance can vary within ±60 μm. The laser diode is designed to be operated on an APC (Automatic Power Control) system. Please note that the specifications provided are subject to change without notice.