690nm, 500mW Semiconductor Laser Diode

690nm, 500mW Semiconductor Laser Diode from Modulight

Typical Specifications by Model:
ML1837:
- Cavity Length (L): 1000 μm
- Chip Width (W): 500 μm
- Emitter Width (WE): 50 μm
- Chip Thickness (H): 130 μm
- Peak Wavelength (λ): 632 ± 3 nm
- Optical Output Power (POPT): 200 mW
- Operating Current (IOP): 525 mA
- Operating Voltage (VOP): 2.2 V
- Threshold Current (ITH): 275 mA
- Slope Efficiency (η): 0.8 W/A
ML1389:
- Cavity Length (L): 1000 μm
- Chip Width (W): 500 μm
- Emitter Width (WE): 50 μm
- Chip Thickness (H): 130 μm
- Peak Wavelength (λ): 633 ± 3 nm
- Optical Output Power (POPT): 220 mW
- Operating Current (IOP): 420 mA
- Operating Voltage (VOP): 2.2 V
- Threshold Current (ITH): 200 mA
- Slope Efficiency(η) :1.0 W/A
ML1524:
- Cavity Length(L) :1000μm
- Chip Width(W) :500μm
- Emitter Width(WE) :150μm
- Chip Thickness(H) :130μm
- Peak Wavelength(λ) :633±3nm
- Optical Output Power(POPT) :500 mW
- Operating Current(IOP) :1200mA
- Operating Voltage(VOP) :2.2V
- Threshold Current(ITH) :600mA
- Slope Efficiency(η): 0.9 W/A
ML1887:
- Cavity Length (L): 1000 μm
- Chip Width (W): 500 μm
- Emitter Width (WE): 150 μm
- Chip Thickness (H): 130 μm
- Peak Wavelength (λ): 650 ± 5 nm
- Optical Output Power (POPT): 500 mW
- Operating Current (IOP): 1150 mA
- Operating Voltage (VOP): 2.1 V
- Threshold Current (ITH): 600 mA
- Slope Efficiency(η): 0.9 W/A