830nm, 70mW TO-can Laser Diode

Typical Specifications:
- Operating Current (Iop): 120-150 mA
- Threshold Current (Ith): 27-45 mA
- Optical Output Power (Po): 70 mW
- Lasing Wavelength (λp): 825-845 nm
- Beam Divergence (θ⊥): 25-40 deg
- Astigmatism (As): 15 μm
- Monitor Current (Im): 0.3-0.9 mA
- Optical Distance (ΔX, ΔY, ΔZ): ±60 μm

Absolute Maximum Ratings:
- Optical Output Power (P): 70 mW
- Laser Diode Reverse Voltage (V): 2 V
- Photo Diode Reverse Voltage (V): 30 V
- Operating Temperature: -10 to +60 °C
- Storage Temperature: -40 to +85 °C

Overview:
The QL83K6S-A/B/C AlGaAs Laser Diode is a high-performance laser diode designed for various applications. It offers a typical optical output power of 70 mW and operates at an operating current range of 120-150 mA. The laser diode has a lasing wavelength of 825-845 nm and a beam divergence of 25-40 degrees. It also features a built-in photo diode for monitoring purposes, with a monitor current range of 0.3-0.9 mA. The laser diode has a compact package dimension and can withstand operating temperatures ranging from -10 to +60 °C. It is important to note that the QL83K6S-A/B/C laser diode should be operated on APC (Automatic Power Control) mode.