905nm, 10mW IR Laser Diode

Typical Specifications:
- Optical Output Power (Po): -10mW
- Threshold Current (Ith): 12-25mA
- Operating Current (Iop): 35-60mA
- Operating Voltage (Vop): 1.5-1.8V
- Slope Efficiency (SE): 0.3-0.5mW/mA
- Lasing Wavelength (λp): 885-905nm
- Beam Divergence θ⊥: 28-35 degrees
- Beam Divergence ∆θ: -2.5 degrees
- Beam Angle ∆θ⊥: -3.0 degrees
- Monitor Current (Im): 0.1-0.4mA
- Optical Distance ∆X, ∆Y, ∆Z: 60μm

Absolute Maximum Ratings:
- Optical Output Power (P): 12mW
- Laser Diode Reverse Voltage: 2V
- Photo Diode Reverse Voltage: 30V
- Operating Temperature: -10 to +70°C
- Storage Temperature: -40 to +85°C

Overview:
The QL90F7S-A/B/C InGaAs Laser Diode is a reliable light source with a typical light output power of -10mW. It has a lasing wavelength of 885-905nm and a beam divergence of 28-35 degrees. The laser diode has a threshold current of 12-25mA and an operating current of 35-60mA (Po=10mW). It also has an operating voltage of 1.5-1.8V (Po=10mW) and a slope efficiency of 0.3-0.5mW/mA. The laser diode is suitable for various applications such as sensors and industrial optical modules. It has absolute maximum ratings for optical output power, laser diode reverse voltage, photo diode reverse voltage, operating temperature, and storage temperature.