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1060nm, 80mW Gain Chips

  • 1060nm, 80mW Laser Gain Chips Main Image
  • 1060nm, 80mW Laser Gain Chips Specifications

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Key Features
  • Gain Chip For Integration into Your Laser Product
  • Wide Tuning Band
  • Low Facet Reflectance with Angled Facet Structure
  • Optical Output Power: 80 mW

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MODEL RLS/QLF101A-AA
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General SPECIFICATIONS
  • Optical Output Power: 80 mW
  • Forward Current: 250 mA
  • Forward Voltage: 2 V
  • 3dB Optical Bandwidth at 100 mA: 43 nm
  • Refer to Datasheet for Additional Specifications

Product Overview:

1060nm Gain Chip Overview

The QLF101A-AA is a 1060-nm band gain chip suitable for a wide-band tunable light source.

Features
- Wide tuning band
- Low facet reflectance with angled facet structure

Application
- Tunable external cavity lasers
- Wide band light source

Proper Handling and Operation of Diode Lasers

Diode lasers are highly susceptible to damage from ESD and from temperatures exceeding their specified safe operating range. The user is advised to use care and proper ESD safety practices when handling them to avoid damage to the laser. A properly rated low noise current source, a low thermal resistance mount and a temperature controller should be used for optimal device performance and reliability.

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