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1306nm, 10mW Quantum Dot Laser Diode

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  • 1300nm 10mW Quantum Dot Laser Diode LI Curve
  • 1310nm, 10mW Quantum Dot Specifications
  • 1310nm Quantum Dot Laser Diode Mechanical Drawing

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sku / item#: RLS/QLF1335-AE
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Key Features
  • 1306 nm Center Wavelength, 10 mW
  • Quantum Dot Technology Delivers Very High Wavelength Stability
  • Operates at Extreme Temperature Ranges
  • 5.6 mm TO-Can package

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  • Center Wavelength: 1300 nm
  • CW Output Power: 10 mW
  • Spectral Width: 3.2 nm
ELECTRICAL Characteristics at 25°C
  • Operating Current: 55 mA
  • Threshold Current: 15 mA
  • Forward Voltage 1.3 V
ELECTRICAL Characteristics at 175°C
  • Operating Current: 110 mA
  • Threshold Current: 70 mA
  • Forward Voltage 1.3 V

Product Overview:

1306nm, 10mW Quantum-Dot Fabry-Perot Laser Diode Overview

The QLF1335-AE is 1306nm quantum dot laser diode device for use in extremely high temperature environment. The laser is mounted into a TO-56 header including a monitor PD for optical power control and hermetic sealed with a lens cap. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent temperature characteristics and low power consumptions.

Proper Handling and Operation of Diode Lasers

Diode lasers are highly susceptible to damage from ESD and from temperatures exceeding their specified safe operating range. The user is advised to use care and proper ESD safety practices when handling them to avoid damage to the laser. A properly rated low noise current source, a low thermal resistance mount and a temperature controller should be used for optimal device performance and reliability.

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