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1305nm, 16mW, Quantum Dot Fabry-Perot Laser Diode Chip

  • 1305nm Quantum Dot Fabry-Perot Laser Diode Dimensions
  • 1305nm Quantum Dot Fabry-Perot Laser Diode Graphs
  • 1305nm Quantum Dot Fabry-Perot Laser Diode Specifications

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Key Features
  • 1305 nm Quantum Dot Fabry-Perot Chip
  • 16 mW Output Power
  • Wide Temperature Operating Range: -10 to 110 °C
  • Excellent High Temperature Performance

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MODEL RLS/QLF131F-P16
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General SPECIFICATIONS at 25 °C
  • Center Wavelength: 1305 nm
  • Threshold Current: 13 mA
  • Operating Current: 48 mA
  • Operating Voltage: 1.43 V
  • Output Power: 20 mW
  • Refer to Datasheet for Additional Specifications
General SPECIFICATIONS at 85 °C
  • Center Wavelength: 1335 nm
  • Threshold Current: 17 mA
  • Operating Current: 68 mA
  • Operating Voltage: 1.37 V
  • Output Power: 20 mW
  • Refer to Datasheet for Additional Specification

Product Overview:

1305nm, 16mW, Quantum Dot Fabry-Perot Laser Diode Chip

QLF131F-P16 is a 1305 nm quantum dot FP laser diode chip for use in telecom and datacom applications up to 110 deg.C temperature. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent temperature characteristics and low power consumptions.
The laser diode chips are shipped on antistatic tape on a 6 inch diameter ring. Refer to the datasheet PDF for instructions on handling, mounting, and testing of the laser diode chips.

Features
- 1305nm Quantum Dot Fabry-Perot Chip
- Wide temperature operation: -10 to 110 °C

Applications
-Optical communication

Proper Handling and Operation of Diode Lasers

Diode lasers are highly susceptible to damage from ESD and from temperatures exceeding their specified safe operating range. The user is advised to use care and proper ESD safety practices when handling them to avoid damage to the laser. A properly rated low noise current source, a low thermal resistance mount and a temperature controller should be used for optimal device performance and reliability.

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