1265nm, 10mW Quantum Dot Laser Diode for Very High TemperaturesQuotes and/or orders for this item are currently NOT AVAILABLE through LaserDiodeSource.com; please contact the Manufacture
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|ELECTRICAL Characteristics at 25°C|
|ELECTRICAL Characteristics at 200°C|
1265nm, 10mW Quantum-Dot Fabry-Perot Laser Diode Overview
The QLF1335-AE is a quantum dot laser diode device for use in extremely high temperature environment. The center wavelength at 25°C is 1265nm.
The laser is mounted in a TO-56 header including a monitor PD for optical power control, and hermetically sealed with a lens cap. Since quantum dot technologies are equipped with active layers of the device, the device delivers excellent temperature characteristics and low power consumptions.
Proper Handling and Operation of Diode Lasers
Diode lasers are highly susceptible to damage from ESD and from temperatures exceeding their specified safe operating range. The user is advised to use care and proper ESD safety practices when handling them to avoid damage to the laser. A properly rated low noise current source, a low thermal resistance mount and a temperature controller should be used for optimal device performance and reliability.
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