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1265nm, 10mW Quantum Dot Laser Diode for Very High Temperatures

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  • 1265nm 10mW Quantum Dot Laser Diode
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Key Features
  • 1265 nm Center Wavelength at 25°C
  • Operates at Extreme Temperature, up to 200°C
  • 5.6 mm TO-Can, With Monitor Photodiode

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MODEL RLS/QLF1335-T200
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OPTICAL
  • Center Wavelength: 1300 nm
  • CW Output Power: 10 mW
  • Spectral Width: 3.2 nm
ELECTRICAL Characteristics at 25°C
  • Center Wavelength: 1265 nm
  • Operating Current: 55 mA
  • Threshold Current: 15 mA
  • Forward Voltage 1.2 V
ELECTRICAL Characteristics at 200°C
  • Operating Current: 120 mA
  • Threshold Current: 70 mA
  • Forward Voltage 1.2 V

Product Overview:

1265nm, 10mW Quantum-Dot Fabry-Perot Laser Diode Overview

The QLF1335-AE is a quantum dot laser diode device for use in extremely high temperature environment. The center wavelength at 25°C is 1265nm.

The laser is mounted in a TO-56 header including a monitor PD for optical power control, and hermetically sealed with a lens cap. Since quantum dot technologies are equipped with active layers of the device, the device delivers excellent temperature characteristics and low power consumptions.

Proper Handling and Operation of Diode Lasers

Diode lasers are highly susceptible to damage from ESD and from temperatures exceeding their specified safe operating range. The user is advised to use care and proper ESD safety practices when handling them to avoid damage to the laser. A properly rated low noise current source, a low thermal resistance mount and a temperature controller should be used for optimal device performance and reliability.

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