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1310nm, 6mW Quantum Dot Laser Diode

  • 1310nm Laser Diode Image
  • 1310nm Laser Diode LI Curve
  • 1310nm Laser Diode Wavelength
  • 1310nm Laser Diode TO-Can Dimensions

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Key Features
  • 2.5 Gbps Quantum Dot Laser Diode for Telecom and Datacom Applications
  • Quantum Dot Technology Delivers Excellent High Temperature Performance
  • 6 mW Optical Output Power
  • 5.6mm TO-CAN package

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MODEL RLS/QLF1399-AA
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Optical Specifications (typical @ 25°C)
  • Center Wavelength: 1310 nm
  • CW Output Power: 6 mW
  • Spectral Width: 2.6 nm
  • Slope Efficiency: 0.28 W/A
Electrical Specifications (typical @ 25°C)
  • Operating Current: 28 mA
  • Operating Voltage: 1.4 Volts
  • Threshold Current: 8 mA
GENERAL SPECIFICATIONS (typical @ 85°C)
  • Output Power: 6 mW
  • Center Wavelength: 1335 nm
  • Threshold Current: 12 mA
  • Operating Current: 33 mA
  • Slope Efficiency: 0.25 W / A
  • Operating Voltage: 1.4 V

Product Overview:

1310nm, 6mW Quantum Dot Laser Diode

The 1310 nm quantum dot laser diode device for use in telecom and datacom applications up to 2.5 Gbps speed. The laser is mounted into a TO-56 header without photodiode monitor and is hermetically sealed with a lens cap. Since quantum dot technologies are equipped with active layers of the device, the laser features excellent temperature characteristics and low power consumption.

Proper Handling and Operation of Diode Lasers

Diode lasers are highly susceptible to damage from ESD and from temperatures exceeding their specified safe operating range. The user is advised to use care and proper ESD safety practices when handling them to avoid damage to the laser. A properly rated low noise current source, a low thermal resistance mount and a temperature controller should be used for optimal device performance and reliability.

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