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1550nm Monolithically Integrated DFB Laser and Modulator in-house Chip

  • 1550nm Monolithically Integrated DFB Laser and Modulator in-house Chip
  • 1550nm Monolithically Integrated DFB Laser and Modulator in-house Chip Diagram and Dimensions

Request Price   Ships: | Model RLS-04919

Key Features
  • InGaAsP monolithically integrated DFB laser and modulator in-house chip
  • Low drive voltage (<= 2Vpp)
  • Very low dispersion penalty up to 80 km for 10.7Gbit/s operation (up to 1600ps/nm)
  • XMD MSA compliant
  • FPC for electrical connections
  • Manufactured by 3SP Group, Fulfilled by Laser Diode Source

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MODEL RLS-04919
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Product Overview:

This 3SP 1925 LMM contains a 3S PHOTONICS DFB laser with monolithically integrated electro-absorption modulator. The 1550 nm laser modulation voltage is applied to the modulator section while the DFB laser operates CW. Without the complexity of LiNbO3 external modulators, the 1925 LMM is dedicated to STM64 / OC-192 bit rate with reduced size and cost. This device allows 10 Gbit/s data transmission with an extinction ratio higher than 10dB and less than 2V modulation voltage. The 1925 LMM is optimized for up to 10.7Gbit/s TDM transmission systems supporting dispersion up to 1600 ps/nm. Features include InGaAsP monolithically integrated DFB laser and modulator in-house chip as well as low drive voltage, very low dispersion penalty, and up to 80 km for 10.7Gbps.

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