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445nm 100mW Laser Diode

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Key Features
  • 445 nm Single Mode Laser Diode with 100 mW of Output Power

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Optical and Electrical Characteristics (typical)
  • Optical Output Power: 100 mW
  • Wavelength: 445 nm
  • Threshold Current: 25 mA
  • Forward Current: 100 mA
  • Forward Voltage: 5.3 V
  • Slope Efficiency: 1.3 W/A
  • Beam Divergence Parallel: 8.5 deg.
  • Beam Divergence Perpendicular: 23.5 deg.
  • Monitor Current: 1.0 mA
Absolute Maximum Ratings:
  • Optical Output Power: 120mW
  • Reverse Current: 85mA
  • PD Reverse Voltage: 5V
  • Storage Temperature: -40 to +85°C
  • Operating Temperature (Case): -10 to +60°C

Product Overview:

These single mode laser diodes at 445nm offer up to 100mW of CW optical power and come in an industry standard 5.6 mm TO-can package. These devices have an internal Zener Diode which protects the diode laser chip against reverse power and transient power damage. These Gallium Nitride based semiconductor laser diodes typically emit a violet output. They are used in many commercial and research applications. Their wavelength allows them to be used in applications such as fluorescence research applications.

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