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- 635nm AlGaInP quantum well fabricated by MOCVD semiconductor laser
- Low threshold current and high slope efficiency
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Laser Diode from Frankfurt laser is a quantum well fabricated by MOCVD semiconductor laser diode. The data sheet and specifications documents attached detail the following features and benefits, as well as key specifications. This 635nm device features a low threshold current. It also offers a high slope efficiency. The key features contribute to an overall low operating current and contribute to enhancing reliability. This 635nm diode laser is a CW device. It is a single mode injection device and comes with an integrated / built-in monitor photo-diode to stabilize the optical output power. Monitor photocurrent is specified at 0.15mA typically and the threshold current is specified at 24mA typically. Optical output power is specified at 5mW and the device is offered in a TO-can package. This laser diode is suitable for applications in high precision industrial laser markers other opto-electronic systems.
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