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650nm, 80mW High Power Diode Module, Red Laser for R&D Applications

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Key Features

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General Specifications
  • Wavelength (nm): 650±10
  • Operating mode: CW
  • Output power (mW): >1, 10, 20, …,80
  • Power stability (rms, over 4 hours): <1%, <3%
  • Transverse mode: Near TEM00
  • Noise of amplitude(rms,20Hz~20MHz): <1%(<0.5%, optional)
  • M2 factor: <1.2
  • Beam diameter at the aperture (1/e2,mm): ~1.0
  • Beam divergence, full angle (mrad): <1.0
  • Polarization ratio: >50:1 (>100:1, optional) / Horizontal±5 degree (Vertical Optional)
  • Warm-up time (minutes): <5
  • Beam height from base plate (mm):19
  • Operating temperature (℃): 10~35
  • Input voltage: +12VDC
  • Modulation: DMOD (TTL) or AMOD (Analog) up to 1MHz / DMOD+ AMOD (TTL + Analog)
  • Expected lifetime (hours): 10000
  • Warranty: 1 year

Product Overview:

These 650nm wavelength diode laser based modules are designed to delivery high stability red lasing in a continuous wave operating mode. They offer output power level versions available from 10mW up to 80mW. The laser output has a power stability of < 3% and a transverse mode near TEM00. The noise of amplitude (20Hz~20MHz) is <1%. The M squared factor is <1.2 with the beam diameter at the aperture of approximately 1mm. These modules ship with a power supply that accepts a standard 12VDC input. They can be modulated digitally (TTL) or analog up to a 1MHz bandwidth.

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