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660nm, 80mW Laser Diode Module

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Key Features
  • Integrated electronics
  • Plug and play operation
  • International standard interface
  • 660nm wavelength

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Specifications (typical)
  • Wavelength (nm): 660±5
  • Operating mode: CW
  • Output power (mW): >1, 10, 20, …,80
  • Power stability (rms, over 4 hours): <1%, <3%
  • Transverse mode: Near TEM00
  • Noise of amplitude(rms,20Hz~20MHz): <1%(<0.5%, optional)
  • M 2 factor: <1.2
  • Beam diameter at the aperture (1/e2 ,mm): ~1.0
  • Beam divergence, full angle (mrad): <1.0
  • Polarization ratio: >50:1 (>100:1, optional) Horizontal±5 degree (Vertical Optional)
  • Warm-up time (minutes): <5
  • Beam height from base plate (mm): 19
  • Operating temperature (℃): 10~35
  • Input voltage: +12VDC
  • Modulation: DMOD (TTL) or AMOD (Analog) up to 1MHz DMOD+ AMOD (TTL + Analog)
  • Expected lifetime (hours): 10000
  • Warranty: 1 year

Product Overview:

This is a 660nm XS series laser diode from CNI. This device features integrated electronics, plug and play, miniaturization, international standard interface. They are the ideal solution for a wide range of applications including life sciences, environmental monitoring, inspection and machine vision.

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