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808nm, 80mW Laser Diode Source and Control System

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Key Features
  • Output power (mW): >1~80mW
  • 808 nm (±3nm)
  • M2 factor: <1.5

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General Specifications (Typical)
  • Wavelength (nm): 808 nm (±3nm)
  • Operating mode: CW
  • Output power (mW): >1~80mW
  • Power stability (rms, over 4 hours): <1%,
  • Transverse mode: Near TEM00
  • Noise of amplitude(rms,20Hz~20MHz): <1%(<0.5%, optional)
  • M2 factor: <1.5
  • Beam diameter at the aperture (1/e2,mm): ~3.5
  • Beam divergence, full angle (mrad): <1.0
  • Warm-up time (minutes): <5
  • Beam height from base plate (mm): 19
  • Operating temperature (℃): 10~35
  • Input voltage: +12VDC
  • Modulation: DMOD (TTL) or AMOD (Analog) up to 1MHz / DMOD+ AMOD (TTL + Analog)
  • Expected lifetime (hours): 10000
  • Warranty: 1 year

Product Overview:

These high stability sources feature integrated electronics for a plug and play source solution. They are used for a wide range of applications including life sciences, environmental monitoring, inspection and machine vision.

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