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850nm, 1000mW Laser Diode, 5.6mm TO-Can Housing

$49.45   Ships: 3 to 5 days | Model RLS-06965

Key Features
  • High Powered Infrared Laser Diode with 1000 mW Power Output (CW)
  • 10,000+ hours Working Life
  • 5.6mm TO-18 Package
  • Offered by Civil Laser, Fulfilled by Laser Diode Source

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PRICE $49.45
Specifications (typical)
  • Output Wavelength: 850nm
  • Output power: 1000mW CW
  • Package Type: TO-18 ( Φ5.6mm)
  • Working life: >10,000 hours
  • Spectrum FWHM: 2nm
  • Threshold Current: 400mA
  • Forward Curernt: 1000 mA
  • Forward Voltage: 1.9 V
  • Slope Efficiency: 1.2 W/A
  • Emitter: 100 um
  • Operating Temperature: -20 to +30 ºC
  • Storage Temperature: -40 to +80 ºC
  • Vertical Far Field: 30º
  • Parallel Far Field: 8º

Product Overview:

This is a 850 nm laser diode with optical output of 1000 mW (CW). These infrared laser devices come in a 5.6 mm TO-18 package design. The average lifetime for these laser modules is >10,000 hours. MOCVD manufactures these semiconductor lasers with a AlGaAs quantum well allowing for low threshold current and high slope efficiency. This along with the low operating current make this laser device ideal for applications in various opto-electronic systems.

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