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- Wavelength 850nm
- Up to 200 mW c.w. operating power
- Up to 550 mW peak power
- Rise time < 2nsec
- Internal TEC temperature stabilization
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|Laser Diode Specifications (typical @ 25°C)|
This laser diode module contains an optimized GaAs substrate based quantum well high power laser diode. It has been designed for customer specific applications and is available with special FBG's and fibers. The extremely stringent reliability requirements are achieved through our patent pending innovative technology. This includes careful design, exactly defined manufacturing and extensive testing. The qualification contains a set of optoelectronic, thermal and mechanical tests. Each laser diode module is individually serialized for traceability and is shipped with a specified set of test data.
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