Home > Wavelengths 1310nm-1690nm > QD Laser > RLS/Epi-Wafers
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Key Features
- Custom Epitaxial Wafer Growth
- Batch Size Between 1 and 5 Wafers
Price and Delivery Quote
Technical Questions for this Product
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Product Overview:
Custom-Grown Epitaxial Wafers for Laser Diodes
Custom-grown epitaxial wafers for light emitting devices, light detection, and electrical device applications.
Structures for Laser Diodes and Light Emitting Devices
- Layer structure for Fabry-Perot lasers (quantum dot/quantum well);
(quantum dot/well active layers with AlGaAs cladding layers)
- Layer structure for DFB lasers (quantum dot/quantum well);
(quantum dot/well active layers with bottom AlGaAs cladding layer)
- VCSEL structure, DBR-incorporated structure
Application for Photo-Detection
- PIN photo-diode structure
- Layers with quantum dots/wells
Electrical device applications
- Resonant Tunneling Diode structure
- HEMT layer structure
- Other custom structure (on an epitaxial substrate with InGaP layer can be possible)
Base Substrate: 3-inch GaAs Wafer
- (n-, p- or un-doped) substrate
- Possible Grown Layers: AlxGa1-xAs (0 < x ≤ 1)
- InAs and InGaAs Quantum Dots
Contact QD Laser for details and information on custom epitaxial wafers grown to suit your application.
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