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Custom-Grown Epitaxial Wafers for Laser Diodes

  • Light Emitting Devices Epitaxial Grown Wafers

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sku / item#: RLS/Epi-Wafers
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Key Features
  • Custom Epitaxial Wafer Growth
  • Batch Size Between 1 and 5 Wafers

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Growth Capabilities
  • Grown Lasers Include:
  • GaAs
  • AlxGa1-xAs (0 < x ≤ 1)
  • InAs Quantum Dots
  • InGaAs Quantum Dots
  • InGaAs Quantum Wells
  • Inquire for Additional Capabilities

Product Overview:

Custom-Grown Epitaxial Wafers for Laser Diodes

Custom-grown epitaxial wafers for light emitting devices, light detection, and electrical device applications.

Structures for Laser Diodes and Light Emitting Devices

- Layer structure for Fabry-Perot lasers (quantum dot/quantum well); (quantum dot/well active layers with AlGaAs cladding layers)
- Layer structure for DFB lasers (quantum dot/quantum well); (quantum dot/well active layers with bottom AlGaAs cladding layer)
- VCSEL structure, DBR-incorporated structure

Application for Photo-Detection

- PIN photo-diode structure
- Layers with quantum dots/wells

Electrical device applications

- Resonant Tunneling Diode structure
- HEMT layer structure
- Other custom structure (on an epitaxial substrate with InGaP layer can be possible)

Base Substrate: 3-inch GaAs Wafer

- (n-, p- or un-doped) substrate
- Possible Grown Layers: AlxGa1-xAs (0 < x ≤ 1)
- InAs and InGaAs Quantum Dots

Contact QD Laser for details and information on custom epitaxial wafers grown to suit your application.

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