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760 nm Discrete-Mode Laser Diode, 15mW

  • 689nm 760nm 780nm 10mW Laser Diode
  • Eblana Photonics Laser Diode 10mW

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Key Features
  • Specifically designed for TDLAS-based O2 sensing
  • 15 mW typical output power
  • TO39 Package with TEC
  • Manufactured by Eblana Photonics, Fulfilled by Laser Diode Source

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Optical Specifications
  • Center Wavelength: 760 nm
  • Available Center Wavelengths: 758 nm - 764 nm
  • Wavelength Tolerance: +/- 1nm
  • CW Output Power (typical): 15 mW (out of fiber)
  • SMSR (typical): >40 dB
  • Temperature Tuning Coefficient (typical): 0.1 nm/°C
  • Current Tuning Coefficient (typical): 6 pm/mA
  • Slope Efficiency (typical): 0.6 mW/mA
  • Beam divergence (perpendicular): 20 °
  • Beam divergence (parallel): 10 °
Electrical Specifications
  • Operating Current: 80mA
  • Forward voltage: < 2.5 Volts
  • Threshold Current (typical): 30 mA
  • TEC Current: < 0.7 Amps
Laser Diode Packaging
  • TO-39 Package
  • Integrated TEC

Product Overview:

Eblana Photonics EP760-DM laser diode is the perfect tool for TDLAS-based O2 sensing. Eblana’s patented Discrete-Mode (DM) technology is used to design a cost effective, highly coherent and stable single mode laser.

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