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1950nm Discrete-Mode Laser Diode, 2mW

  • 1950nm 2mW Single Mode Laser Diode Eblana
  • Eblana Photonics Single Mode 1950nm 2mW
  • Eblana 1950nm 2mW Single Mode Laser Diode

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Key Features
  • Designed for seeding of Thulium doped fibre amplifiers and lasers, as well as various sensing applications
  • 2mW Output Power, typical linewidth < 2 MHz
  • FC/APC Connector
  • Manufactured by Eblana Photonics, Fulfilled by Laser Diode Source
  • Available pre-mounted in an Eblana DX-1 current & temperature controller. Enquire for details

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MODEL RLS-04281
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Optical Specifications
  • Center Wavelength: 1950 nm
  • Available Center Wavelengths: 1908 nm - 1970 nm
  • Wavelength Tolerance: +/- 1 nm
  • Output Power (typical): 2 mW
  • SMSR (typical): 40 dB
  • Optical Linewidth (typical): < 2 MHz
  • Temperature Tuning Coefficient (typical): 0.1 nm/°C
  • Current Tuning Coefficient (typical): 7 pm/mA
  • Slope Efficiency (typical): 0.03 mW/mA
Electrical Specifications
  • Operating Current: 80mA
  • Forward voltage: < 2 Volts
  • Threshold Current (typical): 20 mA
  • TEC Current: < 1.2 A
Laser Diode Packaging
  • Butterfly Package
  • Integrated TEC & 10K Thermistor
  • FC/APC Fiber Optic Connector (SMF or PMF)

Product Overview:

Eblana Photonics EP1950-DM-B laser was designed for seeding of Thulium doped fibre amplifiers and lasers, as well as various sensing applications. Eblana's patented Discrete-Mode (DM) technology enables the design of a mode-hop free laser with excellent SMSR, while at the same time maintaining cost effectiveness.

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