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635nm 10mW Semiconductor Laser | HL6319G/20G

  • HL6319G HL6320G USHIO

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sku / item#: HL6319G/20G
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Key Features
  • 10mW Output Power
  • Red Output Laser Diode

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specifications (@ Temperature 25 °C)
  • Optical output power Po: 10 mW
  • Threshold current Ith: 75 mA(Max)
  • Operating current Iop: 95 mA(Max)
  • Operating voltage Vop: 2.7 V(Max)
  • Lasing Wavelength: 638nm

Product Overview:

The attached Opnext devices are 0.63 μm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Features: • Visible light output: 635 nm Typ (nearly equal to He-Ne gas laser) • Single longitudinal mode • Optical output power: 10 mW CW • Low operating current: 95 mA Max • Low operating voltage: 2.7 V Max • TM mode oscillation

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