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808nm, 100 Watt Laser Diode from Quantel

  • 808nm, 100 Watt Laser Diode from Quantel

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sku / item#: QUALD0003
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Key Features
  • Design Based on Efficient and Reliable 1cm Linear Bar Arrays
  • QCW operation, 100W at 808nm
  • Conductively Cooled Package
  • High Conversion Efficiency
  • Low Thermal Impedance H-Package (CCP, CCS)

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MODEL QUALD0003
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Optical
  • Center Wavelength: 808nm
  • Output Power: 100 Watts
  • Mode of Operation: QCW (Quasi-CW)
  • Maximum Pulse Width: <5 milliseconds
  • Beam Divergence (FWHM): 8 x 36 degrees
  • Total efficiency: 58%
  • Optional Fast Axis Collimating Lens: ~ 8 mrad @ 1/e²
  • Available Package Style: H-Package (CCS, CCP)
  • Total Efficiency (Typ.): 58% @ 808nm
  • Wavelength Variation w/Temperature: 0.26nm / °C
Electrical
  • Operating Current: 95 Amps
  • Operating Voltage: < 2 Volts
  • Threshold Current: 18 Amps
  • Maximum Pulse Width: <5 milliseconds
  • Maximum Duty Cycle: 20%
Applications
  • Ablation
  • Engraving
  • Flat panel display
  • LIBS
  • LIDAR
  • Surface treatment
  • Spectroscopy
  • Marking

Product Overview:

These high power 808nm conductively cooled single laser diode bars operate at high QCW optical power. These devices are offered on an H-packaged bar package with Quasi-CW laser output up to 100 watts at 808nm. The design is optimized to very high repetition rate (up to 50 kHz). They operate at a high duty cycle (20%) and offer and high average optical power due to the package offering a low thermal resistance. An additional FAC lens is an option to offer a well collimated beam at 8 mrad @ 1/e². Theuy are assembled in a compact and rugged package using AuSn hard solder, which allows the building of bars for dense pumping arrays for a wide range of applications.

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