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852nm, 50mW, Single-Mode IR Laser Diode – USHIO HL8341MG

  • 852nm 50mW TO38 laser diode USHIO

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sku / item#: RLS / HL8341MG
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Key Features
  • 852nm Single Mode Laser Diode
  • 50mW Output Power
  • Operating Temperature Range –10°C / +60°C
  • 5.6mm TO56 Package
  • Common Photodiode Anode - Laser Diode Cathode

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MODEL RLS / HL8341MG
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Absolute Maximum Ratings (Tc=25°C) - HL8341MG
  • Optical output power Po: 50 mW
  • LD Reverse Voltage VR(LD): 2 V
  • PD Reverse Voltage VR(PD): 30 V
  • Operating Temperature Topr: -10 ~ +60 °C
  • Storage Temperature Tstg: -40 ~ +85 °C
Optical and Electrical Characteristics (Tc=25°C) - HL8341MG
  • Threshold current Ith: 40 mA(Max)
  • Operating current Iop: 100 mA(Max)
  • Operating voltage Vop: 2.4 V(Max)
Wavelength
  • Lasing Wavelength: 852nm

Product Overview:

852nm, 50mW Laser Diode

This USHIO 852nm laser diode delivers up to 50mW CW output power for infrared illumination applications. The internal monitor photodiode provides a means for automatic power control and output power monitoring. The laser is capable of operating in a wide range of ambient temperatures, and is useful in night vision, machine vision, and sensing applications.

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