808nm Laser Diode | Broad Area Laser

Product Overview:

808nm Laser Diode | 8W Output Power

The EYP-BAL-0808-08000-4020-CMT04-0000 is a GaAs semiconductor laser diode designed for material processing applications. It emits at a wavelength of 808 nm. This broad area laser features a single emitter structure and is mounted on a C-Mount for ease of integration. These laser diodes deliver an optical output power up to 8 W with a recommended operational current of 12 amps. They operate effectively within a case temperature range of 5°C to 40°C, with a recommended range of 15°C to 30°C for optimal performance. The maximum forward current is rated at 13 amps, while the threshold current is approximately 2.5 amps. The center wavelength is specified between 793 nm and 823 nm, with a spectral width (FWHM) of 6 nm and a temperature coefficient of wavelength of 0.4 nm/K. This laser diode is classified as a Class IV laser product, indicating that it emits invisible laser radiation. Proper safety precautions must be taken to avoid eye or skin exposure to direct or scattered radiation. The device is sensitive to thermal stress, and it is recommended to operate it on appropriate heat sinks to ensure longevity.