1305nm, 16mW Fabry-Perot Laser Diode

1305nm, 16mW, Quantum Dot Fabry-Perot Laser Diode Chip

Typical Specifications:
- Center wavelength: 1305 nm
- Output power: 16 mW
- Threshold current: 13-25 mA
- Operating current: 48-85 mA
- Operating voltage: 1.43-1.6 V
- Slope efficiency: 0.25-0.33 W/A
- Spectral width: 2.2-2.7 nm
- Beam divergence angle: 18°

Absolute Maximum Ratings:
- Reverse voltage: 2 V
- Operating temperature: -40 to 85° C
- Storage temperature: -40 to 100° C
- Soldering temperature: 260° C for 10s
- Operating current: 150 mA
- Power dissipation: 200 mW

Features:
- 1305nm Quantum Dot Fabry-Perot Chip
- Wide temperature operation: -10 to 110 °C

Applications
- Optical communication

QLF131F-P16 is a 1305 nm quantum dot FP laser diode chip for use in telecom and datacom applications up to 110 deg.C temperature. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent temperature characteristics and low power consumptions.


The laser diode chips are shipped on antistatic tape on a 6 inch diameter ring. Refer to the datasheet PDF for instructions on handling, mounting, and testing of the laser diode chips.