1310nm, 6mW QD Laser Diode

1310nm, 6mW Quantum Dot Laser Diode

Typical Specifications:
- Center wavelength: 1310 nm
- Spectral width: 2.1 nm
- Rise and fall time: 0.05 nsec
- Optical power coupled to fiber: 0.85 mW
- Focal length D_f: 6.25 mm
- Ray Axis θ_xy: 0 deg.
- Beam angle θ_z: 1.1 deg.
- Threshold current: 15 mA
- Operation current: 40 mA
- Operation voltage: 1.6 V
- Slope efficiency η: 0.28 W/A

Absolute Maximum Ratings:
- Reverse voltage: 2 V
- Operating temperature: -10°C to +85°C
- Storage temperature: -40°C to +85°C
- Soldering temperature: 260°C for 10s

The 1310 nm quantum dot laser diode device for use in telecom and datacom applications up to 2.5 Gbps speed. The laser is mounted into a TO-56 header without photodiode monitor and is hermetically sealed with a lens cap. Since quantum dot technologies are equipped with active layers of the device, the laser features excellent temperature characteristics and low power consumption.