650nm, 10mW Diode Laser

Typical Specifications:
- Optical Output Power (Po): -10 to 10 mW
- Threshold Current (Ith): 20 to 25 mA
- Operating Current (Iop): 36 to 45 mA
- Slope Efficiency (SE): 0.4 to 1.0 mW/mA
- Operating Voltage (Vop): 2.3 to 2.6 V
- Lasing Wavelength (λp): 645 to 660 nm
- Beam Divergence (θ): 6 to 12 degrees
- Beam Angle (Δθ): ±2 to ±3 degrees
- Monitor Current (Im): 0.05 to 0.3 mA
- Optical Distance (ΔX, ΔY, ΔZ): ±80 μm

Absolute Maximum Ratings:
- Optical Output Power (P): 12 mW
- Laser Diode Reverse Voltage (V): 2 V
- Photo Diode Reverse Voltage (V): 30 V
- Operating Temperature: -10 to +50 °C
- Storage Temperature: -40 to +85 °C

Overview:
The QL65F5S-A/B/C InGaAlP Laser Diode is a high-performance laser diode designed for a variety of applications, including optical leveling, laser pointing, and barcode reading. It has a typical optical output power of -10 to 10 mW, a lasing wavelength of 645 to 660 nm, and a beam divergence of 6 to 12 degrees. The laser diode operates at an operating voltage of 2.3 to 2.6 V and an operating current of 36 to 45 mA (at Po=10mW). It has a compact package size and is easy to integrate into various systems.