660nm, 50mW Fabry-Perot Laser Diode

660nm, 50mW Fabry-Perot Laser Diode

Typical Specifications:
- Threshold current (Ith): 55-70 mA
- Operating current (Iop): 100-135 mA
- Operating voltage (Vop): 2.3-2.8 V
- Slope efficiency (η): 0.8-1.1 W/A
- Monitor current (Im): 25-150 A
- Peak wavelength: 655-665 nm
- Beam divergence (horizontal): 7-13°
- Beam divergence (vertical): 11-17°
- Beam angle (horizontal): -3 to 3°
- Beam angle (vertical): -3 to 3°

Absolute Maximum Ratings:
- Optical output power (Po): 60 mW
- LD reverse voltage (VRLD): 2 V
- PD reverse voltage (VRPD): 30 V
- Operation temperature (Tc): -10 to 60° C
- Storage temperature (Tstg): -40 to 85° C

Features
- 660 nm FP-LD
- 5.6mm TO-Can package
- High output power and slope efficiency
- Including monitor PD
- Two types of pin assignments:
-- anode common type (QLF063A-AA)
-- cathode common type (QLF063D-AA)

Applications
- Industrial laser markers
- Measuring instruments
- Life science applications

The QLF063A-AA are 660 nm quantum well laser devices designed for high output power application. The laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap. The QLF063A-AA is a common anode configuration package. Also available is the common cathode configuration; please inquire for details.