850nm, 40mW TO-can Laser Diode

Typical Specifications:
- Operating Current (Iop): 75-110 mA
- Optical Output Power (Po): 40 mW
- Threshold Current (Ith): 30-50 mA
- Slope Efficiency (SE): 0
- Lasing Wavelength (λp): 845-865 nm
- Beam Divergence (θ⊥): 23-34°
- Beam Angle (Δθ⊥): ±3°
- Monitor Current (Im): 0.05-0.7 mA
- Astigmatism (As): 15 μm
- Optical Distance (ΔX, ΔY, ΔZ): ±60 μm

Absolute Maximum Ratings:
- Optical Output Power (P): 42 mW
- Laser Diode Reverse Voltage (V): 2 V
- Photo Diode Reverse Voltage (V): 30 V
- Operating Temperature: -10 to +60 °C
- Storage Temperature: -40 to +85 °C

Overview:
The QL85J6S-A/B/C-L AlGaAs Laser Diode is a semiconductor device with a quantum well structure that emits light in the 850nm band. It is designed to be used as a light source in various applications, including industrial optical modules and sensors. The laser diode has a typical light output power of 40mW and operates at an operating current of 75-110 mA. It features a built-in photo diode for monitoring the laser diode. The package type is TO-18 (5.6mmφ). The laser diode has a lasing wavelength of 845-865 nm and a beam divergence of 23-34 degrees.